Semiconductor integrated circuit

Details Semiconductor integrated circuit Semiconductor integrated circuit

H - Electricity

01

L

H01L 33/00 (2006.01)

Patent

CA 2250352

The invention concerns a semiconductor integrated circuit with a component (3) which is formed on a semiconductor substrate (2) and comprises an active PN junction (6) formed between a first semiconductor region (4) with a first type of conductivity and a second semiconductor region (5) with a second type of conductivity. The semiconductor integrated circuit also comprises a protective circuit (8) which is associated with the component (3) for discharging overvoltages and electrostatic charges. The protective circuit (8) associated with the component (3) comprises a protective PN junction (9) which is formed on a semiconductor carrier (7) and has a first semiconductor carrier region (10), which is disposed in the semiconductor carrier (7) and has the first type of conductivity, and a second semiconductor carrier region (11) having the second type of conductivity. The second semiconductor carrier region (11) with the second type of conductivity is electrically coupled to the first semiconductor region (4) with the first type of conductivity formed in the semiconductor substrate (2).

L'invention concerne un circuit intégré à semi-conducteur comportant un composant (3) formé sur un substrat à semi-conducteur (2), dont la jonction p-n active (6) est formée entre une première zone à semi-conducteur (4) d'un premier type de conductivité et une seconde zone à semi-conducteur (5) d'un second type de conductivité. Ce circuit intégré à semi-conducteur comporte également un circuit de protection (8) associé audit composant (3), destiné à dériver les surtensions et les charges électrostatiques. Le circuit de protection (8) associé au composant (3) présente une jonction p-n de protection (9) formée sur un support de semi-conducteur (7) et qui comporte une première zone de support à semi-conducteur (10) d'un premier type de conductivité, disposée dans le support de semi-conducteur (7), et une seconde zone de support à semi-conducteur (11) d'un second type de conductivité qui est couplée électriquement avec la première zone à semi-conducteur (4) d'un premier type de conductivité formée dans le substrat de semi-conducteur (2).

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