Semiconductor integrated circuit device

Details Semiconductor integrated circuit device Semiconductor integrated circuit device

H - Electricity

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356/123

H01L 21/70 (2006.01) H01L 29/78 (2006.01) H01L 29/808 (2006.01)

Patent

CA 1121518

Abstract An IC device comprising a junction type field ef- fect transistor of a back gate type and a bipolar device such as a bipolar transistor and a resistor made of impurity diffused region, wherein an extremely thin (in the order of 0.05-0.2 µ m) impurity doped surface region of a conductivity type same as that of a hack gate region is formed at the sur- face of a surface channel region, and is separated from at least a drain region to sustain high breakdown voltage be- tween gate region and the drain region; the impurity surface region serving to reduce noise and also enabling to achieve satisfactory characteristics of J-FET and also good ohmic characteristics of the resistor.

309746

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