H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/128
H01L 27/06 (2006.01) G11C 17/12 (2006.01) H01L 21/70 (2006.01) H01L 21/8234 (2006.01) H01L 21/8246 (2006.01) H01L 27/112 (2006.01) H03K 19/096 (2006.01)
Patent
CA 1070436
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE COMPOSED OF INSULATED GATE FIELD-EFFECT TRANSISTORS Abstract of the Disclosure In a semiconductor integrated circuit device composed of insulated gate field-effect transistors, the improvement comprising the facts that the insulated gate field-effect transistors having gate insulating films of substantially equal thicknesses are arranged on a principal surface of a semiconductor substrate in the shape of a matrix, that gate input columns of the transistors are formed of polycrystal silicon layers, and that some of the transistors are made the enhancement type, while the others are made the depletion type. Further, the respective transistors are formed by the self-alignment technique which employs the polycrystal silicon layers as a diffusion mask, and the depletion type transistors are formed by implanting impurity ions opposite in the conductivity type to the substrate into selected areas of the surface of the substrate. Thus, a read only memory in a MOS-IC chip has its occupying area reduced remarkably.
240274
LandOfFree
Semiconductor integrated circuit device composed of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor integrated circuit device composed of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated circuit device composed of... will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-705878