Semiconductor integrated-circuit device metallization

Details Semiconductor integrated-circuit device metallization Semiconductor integrated-circuit device metallization

H - Electricity

01

L

356/148

H01L 21/02 (2006.01) H01L 21/3205 (2006.01)

Patent

CA 2004909

V. V. S. Rana-N. Tsai 6-2 Abstract of the Disclosure In the manufacture of an integrated-circuit device, periodic interruption of grain growth during chemical vapor deposition of a metal film results in enhanced surface smoothness and ease of patterning. Interruption of grain growth is by deposition of an auxiliary material which, in the interest of high conductivity of the film, may be conductive, may form a conductive compound or alloy, or may be eliminated upon additional metal deposition. When the metal is tungsten, silicon is a preferred grain-growth interrupting material. - 10-

Affiliated with

Also associated with

Rating

Semiconductor integrated-circuit device metallization does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor integrated-circuit device metallization, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated-circuit device metallization will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1580765