Semiconductor integrated circuit devices

Details Semiconductor integrated circuit devices Semiconductor integrated circuit devices

H - Electricity

01

L

356/123, 333/52

H01L 49/00 (2006.01) H01C 7/00 (2006.01) H01G 4/06 (2006.01) H01L 27/07 (2006.01) H03H 11/12 (2006.01)

Patent

CA 1154544

Abstract: The present invention relates to an integrated circuit device including a surface-adjacent zone which extends between a pair of spaced-apart zones all on one conductivity type in a semiconductor region of the opposite conductivity type. A conductive layer overlies the surface-adjacent zone and a dielectric layer is provided between the conductive layer and the surface-adjacent zone. The integrated circuit is characterized in that the surface adjacent zone impurity concentration is such as to preclude conductivity modulation at usual operating potentials applied between the conductive layer and the surface-adjacent zone. The device is operable as a capacitor-resistor-capacitor (CRC) element.

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