Semiconductor laser

Details Semiconductor laser Semiconductor laser

H - Electricity

01

S

345/32

H01S 5/22 (2006.01) H01S 5/024 (2006.01) H01S 5/20 (2006.01) H01L 33/00 (2006.01)

Patent

CA 1063215

SEMICONDUCTOR LASER ABSTRACT OF THE DISCLOSURE The present invention relates to a mesa-stripe geometry semiconductor laser. The laser is comprised of an electrode which is provided on one principal surface of a semiconductor wafer, a P-N junction provided on the other and opposite principal surface of the wafer, an active region which adjoins the P-N junction, and a mesa shaped current-conducting semiconductor region which is formed on a principal surface of the active region in a small sectional area and which contains the active region therein. The laser also is comprised of a mount supporting a second semiconductor region which is formed into a mesa shape by an etching groove formed on at least one side of said current-conducting semiconductor region. The laser is further comprised of a dielectric layer which covers surfaces of the second semiconductor region and the etching groove, an electrode formed on the dielectric layer and on the current-conducting semiconductor region and a heat sink. The mount supporting semiconductor region of the laser is higher than the current-conducting region.

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