Semiconductor laser

Details Semiconductor laser Semiconductor laser

H - Electricity

01

S

345/32

H01S 5/223 (2006.01)

Patent

CA 1253945

ABSTRACT OF THE DISCLOSURE A semiconductor laser is disclosed, which is formed such that on a substrate there are in turn formed a first cladding layer, an active layer, a second cladding layer and a light absorbing layer for limiting a current path and for absorbing a light oscillated out from the active layer. In this case, the light absorbing layer is provided with a removed-away portion of stripe-shape for forming the current path, and in which the width W of the removed-away portion is selected in a range from 1 to 4 µm, the thickness d1 of the active layer is selected so as to satisfy the condition of d1 ? 500 .ANG. and the distance d2 between the active layer and the light absorbing layer is selected in a range from 0.2 to 0.7 µm, respectively.

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