Semiconductor laser

Details Semiconductor laser Semiconductor laser

H - Electricity

01

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H01S 5/20 (2006.01) H01S 5/227 (2006.01) H01S 5/323 (2006.01)

Patent

CA 1241422

14 ABSTRACT: Semiconductor laser. A semiconductor laser of the double hetero- junction (DH) type having a current-confining buried blocking layer. According to the invention, a high- resistance region (14) having a disturbed crystal structure is present outside and on either side of the strip-shaped active region 4A and extends at least throughout the thickness of the blocking layer 5. As a result, the lateral leakage currents and the parasitic capacitances are reduced so that the laser can be used at frequencies considerably higher than 1 GHz. The high-resistance region (14) is preferably obtained by protron bombardment. The invention is particularly advantageous in DCPBH lasers for optical communication. Fig. 1.

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