Semiconductor laser

Details Semiconductor laser Semiconductor laser

H - Electricity

01

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H01S 5/20 (2006.01) H01S 5/22 (2006.01) H01S 5/223 (2006.01)

Patent

CA 1179049

ABSTRACT In a semiconductor laser, a very narrow current injection region is made by forming a terraced or stepped current limiting layer over epitaxially grown double hetero structure layers, including the active layer. By virtue of the terraced current limiting layer when Zn as a p-type impurity to form the current injection region is diffused from the surface of the current limiting layer, the diffused region is formed with a relatively deep part and a relatively shallow part, and the deeper part can be made very narrow by selecting the position of the stripe-shaped diffused region with respect to the step. As a result of such a narrow current injection region and wider surface part thereof, a large current can be injected through the p-side electrode and the current injection to the active layer can be confined to a very limited narrow region of the latter, attaining a stable fundamental mode transverse mode oscillation and low threshold current.

379819

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