Semiconductor laser

Details Semiconductor laser Semiconductor laser

H - Electricity

01

S

H01S 5/34 (2006.01) H01S 5/20 (2006.01) H01S 5/323 (2006.01) H01S 5/223 (2006.01) H01S 5/30 (2006.01) H01S 5/32 (2006.01) H01S 3/18 (1995.01)

Patent

CA 2071025

Abstract of the Disclosure A p-clad layer constituting the semiconductor laser device according to this invention includes an inner clad area near to an active layer, and an outer clad area remote from the active layer, the outer clad area having a narrower bandgap than that of the inner clad area, the thickness and the composition of the inner clad area being so set that beams do not substantially exude from the active layer to the outer clad area. A multi-quantum barrier structure is provided between the active layer and the p-clad layer. At least one of barrier layers of the multi-quantum barrier structure is formed of a material which applies tensile stress thereto, and at least one of well layers provided between one of the barrier layers and its adjacent one is formed of a material which applies contraction stress thereto, whereby an average lattice constant of the multi-quantum barrier agrees with that of a substrate. The use of a material in the barrier layers allows the bandgap to be sufficiently wide. Consequently even in comparatively high-temperature environments carriers, especially electrons, can be prevented from overflowing from the active layer to the clad layers, and no deterioration of the characteristics takes place.

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