Semiconductor laser

H - Electricity – 01 – S

Patent

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H01S 5/34 (2006.01) H01S 5/343 (2006.01)

Patent

CA 2213040

A semiconductor laser is herein disclosed which comprises an active layer 21 and SCH layers which sandwich the active layer 21 from upper and lower sides, wherein the SCH layer comprises a multi-layer structure of 2 or more layers 22,24,23,25, and this multi-layer structure is constituted so that the band gaps of the respective layers may increase as the multi-layer structure is apart from the active layer.

Laser à semiconducteur comprenant une couche active 21 et des couches SCH encadrant la couche active 21 du côté supérieur et du côté inférieur. La couche SCH comprend une structure multicouche de 2 couches ou plus 22, 24, 23, 25. Elle est constituée de façon que les bandes interdites des couches respectives puissent augmenter dans la mesure où la structure multicouche est éloignée de la couche active.

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