Semiconductor laser

Details Semiconductor laser Semiconductor laser

H - Electricity

01

S

345/32

H01S 5/323 (2006.01)

Patent

CA 1130903

ABSTRACT OF THE DISCLOSURE A semiconductor laser formed on an InP substrate to have a hetero structure comprising a plurality of In1-xGaxAsyP1-y layers which are lattice- matched with InP, in which a light emitting layer included in the layers and having a forbidden band width larger than 0.6 eV but smaller than 0.9 eV at room temperature is sandwiched between two InP layers on the InP substrate, and in which there is provided between the light emitting layer and the InP layer grown thereon at least one buffer layer having a forbidden band width larger than the forbidden band width of the light emitting layer but smaller than the forbidden band width of InP. The forbidden band width of the buffer layer at room temperature may be larger than 0.8 eV but smaller than 1.0 eV.

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