Semiconductor laser

Details Semiconductor laser Semiconductor laser

H - Electricity

01

S

H01S 5/20 (2006.01) H01S 5/323 (2006.01) H01S 5/343 (2006.01) H01S 5/02 (2006.01) H01S 5/22 (2006.01) H01S 5/32 (2006.01) H01S 5/34 (2006.01) H01S 3/18 (1990.01)

Patent

CA 2119159

ABSTRACT OF THE DISCLOSURE A group III-V compound semiconductor laser of a 1 µm band having an excellent conversion efficiency and a high characteristic temperature. The semiconductor laser can emit light in a 1.3 µm band or a 1.55 µm, and has a laser structure including an active layer for emitting light, guide layers sandwiching the active layer and having a band gap larger than the active layer, and clad layers embracing the guide layers and having a band gap larger than the guide layers. The lattice constants of the guide layers and clad layers are larger than a1 by 0.5 % or more and smaller than a2 by 0.5 % or more, where a1 represents the lattice constant of GaAs and a2 is the lattice constant of InP.

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