Semiconductor laser

Details Semiconductor laser Semiconductor laser

H - Electricity

01

S

345/32

H01S 5/223 (2006.01)

Patent

CA 1163350

Abstract of the Disclosure In a semiconductor laser comprising a terrace-shaped semiconductor substrate, a first clad layer formed on the semiconductor substrate, an active layer formed on the first clad layer and having two discontinuity places at bending portions of the first clad layer, a second clad layer formed on the active layer, and a current injection electrode above a lasing region in the active layer, the improvement is that a stable fundamental transverse lasing mode and a circular laser beam are obtainable from the lasing region definitely separated by two discontinuity places in the active layer.

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