Semiconductor laser

Details Semiconductor laser Semiconductor laser

H - Electricity

01

S

345/32

H01S 5/223 (2006.01)

Patent

CA 1180094

Abstract A terraced substrate laser is improved by forming a stripe-shaped impurity diffused current-injection region from a cap layer as to an oblique lasing region of the underlying active layer, so that a corner part of the current injection region at least touches the lasing region. The current injection efficiency of the lasing region is thus greatly improved and the injected current is effectively limited to the oblique lasing region even when A large current is injected. Furthermore, the threshold current can be greatly reduced. This laser can perform a stable fundamental transverse mode oscillation even during high power operation. 7695-1 - 1 -

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