Semiconductor laser

Details Semiconductor laser Semiconductor laser

H - Electricity

01

L

345/32

H01L 27/15 (2006.01) H01S 5/40 (2006.01) H01S 5/042 (2006.01) H01S 5/062 (2006.01) H01S 5/227 (2006.01)

Patent

CA 1171506

- 28 - Abstract of the Disclosure A semiconductor laser comprising a semiconductor substrate of conductivity type, a laminated layer body constracted by laminating a plurality of layer com- ponents on the prescribed region of the surface of the semiconductor substrate and a burying laminated layer body which surrounds said laminated layer body in con- tact with the lateral wall thereof and is formed of a plurality of layer components laminated on the pre- scribed region of the surface of the semiconductor sub- strate. The laminated layer body is formed of a first cladding layer having the same conductivity type as that (first conductivity type) of the semiconductor substrate, first active layer, second cladding layer having the opposite conductivity type (second conductivity type) to that of the semiconductor substrate, second active layer and third cladding layer of the first conductivity type laminated in the order mentioned as counted from the surface of the semiconductor substrate. The burying laminated layer body is formed of a semiconductor elec- trode layer of the second conductivity type and low spe- cific resistivity which substantially contacts the second cladding layer, function as a common electrode layer sometimes confines light and current, and acts as a common electrode layer, and two groups of burying layers respectively provided on the prescribed regions of the top and bottom surface of said semiconductor electrode layer and, when current runs through the semi- conductor electrode layer, then restricts the passage of current to any other crystals layer than the semi- conductor electrode layer by utilizing the back bias of the PN junction and also confine light and current in the first and second activated layers because of a small refractive index and a wide forbidden band gap. Where a prescribed amount of direct current is supplied to the first electrode mounted on the upper side of the laminated layer body, second electrode deposited on the bottom side of said laminated layer body and third elec- trode set on the semiconductor electrode layer included in the burying layer body, then the first and second active layers arranged very close to each other simulta- neously oscillate two independent laser beams admitting of modulation with a low threshold current value.

389957

Affiliated with

Also associated with

Rating

Semiconductor laser does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1188669