Semiconductor laser

Details Semiconductor laser Semiconductor laser

H - Electricity

01

S

345/32

H01S 5/223 (2006.01) H01S 5/02 (2006.01) H01S 5/022 (2006.01)

Patent

CA 1180093

A B S T R A C T This novel laser comprises Q terraced semiconductor substrate having a relatively thick part and a relatively thin part with a step part therebetween. Semiconductor layers are formed over the substrate and include an upper clad layer and a lower clad layer with an active layer therebetween, the active layer having an inclined region extending downwardly from a position above the step part to R position above the relatively thin part of the substrate. An overriding layer is formed on the upper clad layer and has opposite conductivity type to that of the upper clad layer. A further layer having the same conductivity type as that of the overriding layer is formed on the overriding layer, such further layer having a stripe-shaped through-opening which is located above and slightly to one side of the inclined region of the active layer in a direction away from the step, such through-opening exposing a surface region of the overriding layer at the bottom of the through-opening. A conduction layer is formed at least on the sides and bottom of the through-opening and extends towards and contacts the further layer. A first electrode layer is formed in contact with the conduction layer in the through-opening and a second electrode is formed on the bottom face of the substrate. Short-circuiting of the p-n junction caused by solder creep from the bond between the device and its heat sink is avoided by the above structure, which provides flat surfaces at the interface between the device and the heat sink. 9890-1

377700

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