Semiconductor laser and a method of making same

Details Semiconductor laser and a method of making same Semiconductor laser and a method of making same

H - Electricity

01

S

345/33

H01S 3/18 (1985.01)

Patent

CA 1207423

-11- SEMICONDUCTOR LASER AND A METHOD OF MAKING SAME ABSTRACT OF THE DISCLOSURE A semiconductor laser includes a body having parallel end faces and a substrate having a ridge in a major surface thereof which extends between the end surfaces, an active layer overlying the ridge and which tapers in thickness from that portion of the active layer which overlies the ridge and a confinement layer overlying the active layer. The invention also includes a method of forming a semiconductor laser which includes a substrate having a ridge thereon. The method includes the steps of coating a portion of a flat surface of the substrate with an etch resistant material, etching the surface with an anisotropic etchant thereby forming a mesa therein, removing the etch resistant material, further etching the substrate to round the mesa to form a ridge and depositing the active and confinement layers over the surface and the ridge.

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