Semiconductor laser and method of making same

Details Semiconductor laser and method of making same Semiconductor laser and method of making same

H - Electricity

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345/32

H01S 5/16 (2006.01) H01S 5/20 (2006.01) H01S 5/22 (2006.01)

Patent

CA 1181514

16 ABSTRACT: A semiconductor laser having mirror faces serving as resonators, in which the active laser region comprises end zones adjoining the mirror faces and com- prise implanted ions, preferably protons, with associated crystal damage. The end zones have a length which is at least equal to the diffusion length of the recombining charge carriers in the end zones. As a result of the high recombination rate in the end zones substantially no non-radiating recombination occurs at the mirror faces so that mirror erosion is avoided. The invention also relates to a method in which the end zones are formed by an ion bombardment on the upper sur- face of the semiconductor wafer with a number of lasers, which wafer at the area of the mirror (oleavage) faces to be formed is provided with grooves which do not extend up to the active layer, in which grooves the end zones are provided via an ion bombardment through the active layer.

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