Semiconductor laser and method of making the same

Details Semiconductor laser and method of making the same Semiconductor laser and method of making the same

H - Electricity

01

S

345/32

H01S 5/223 (2006.01)

Patent

CA 1237513

Abstract of the Disclosure A semiconductor laser having a groove of a dove-tail-shaped section in a substrate and several epitaxial layers formed thereon including an active layer and a current injection region immediately above the groove. The layers formed in sequence on the substrate, are, a first cladding layer filling the groove, the active layer, a second cladding layer and a current limiting layer. Current injection is effected by dopant diffusion into the current limiting layer through to the second cladding layer. The semiconductor layer attains high power lasing in the fundamental transverse mode.

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