Semiconductor laser and method of manufacturing the same

Details Semiconductor laser and method of manufacturing the same Semiconductor laser and method of manufacturing the same

H - Electricity

01

S

H01S 5/343 (2006.01) H01L 33/00 (2006.01) H01S 5/223 (2006.01) H01S 5/32 (2006.01) H01S 3/19 (1990.01)

Patent

CA 2115589

In a semiconductor laser having a p-type cladding layer consisting of GaInP or AIGaInP, an operating voltage is decreased. In a semiconductor laser formed on a GaAs substrate and having a p-type cladding layer consisting of GaInP or AlGaInP and a p-type contact layer consisting of GaAs or GaInAs, p-type buffer layers are formed between the p-type cladding layer and the p-type contact layer, which consists of a compound containing both arsenic (As) and phosphorus (P) and having a medium bandgap between those of the two layers.

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