Semiconductor laser apparatus and fabrication method of...

Details Semiconductor laser apparatus and fabrication method of... Semiconductor laser apparatus and fabrication method of...

H - Electricity

01

S

H01S 5/06 (2006.01) H01S 5/068 (2006.01) H01S 5/024 (2006.01) H01S 5/062 (2006.01) H01S 5/10 (2006.01)

Patent

CA 2348268

A cavity length is determined on the basis of a relationship of electric drive power to a range of optical output power over 50 mW, for cavity length to be constant as a parameter in a range over 1000 µm, so that the electric drive power is vicinal to a minimum thereof in correspondence to a desirable optical output power. If the optical output is 360 mW for example, a cavity length of 1500 µm is determined to be selected.

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