Semiconductor laser bonding technique

Details Semiconductor laser bonding technique Semiconductor laser bonding technique

H - Electricity

01

L

356/183

H01L 33/00 (2006.01) H01L 21/66 (2006.01) H01S 5/024 (2006.01) H01S 5/02 (2006.01)

Patent

CA 1152231

A SEMICONDUCTOR LASER BONDING TECHNIQUE Abstract of the Disclosure In a method and apparatus for bonding a semiconductor laser chip to a heatsink and testing the bond obtained, temperature in the bonding operation is regulated by passing a small fixed current through the forward biased laser and monitoring corresponding change in voltage caused by alteration of the laser pn junction temperature. Current is passed to the laser through a floating contact consisting of a conducting vacuum pick-up pressed against the laser top surface. Bond integrity is subsequently tested at low temperature by passing a dc current greater than a threshold current through the laser and measuring the resulting light output and then passing a pulsed current with identical peak current level and again measuring light output. The difference in light output is a function of the bond thermal resistance.

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