Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

H - Electricity

01

S

345/32

H01S 5/227 (2006.01)

Patent

CA 1150810

-1- Abstract: This invention consists in improvements in a buried- heterostructure laser having a buried optical guide. The invention facilitates oscillation of the laser in the fundamenetal mode and also enhances the production of the laser. An active layer and an optical guide layer are sandwiched between two cladding layers to form an optical confinement region. The width of the semiconductor material assembly varies in the direction of the stacked layers, and the narrowest part thereof is located on the side of the active layer opposite the optical guide layer. The side surface of this assembly which is parallel to the direction of laser radiation is buried by a burying layer.

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