Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

H - Electricity

01

S

345/32

H01S 3/19 (1980.01)

Patent

CA 1150809

Abstract of the Disclosure A semiconductor laser device has a stripe-shaped impurity-diffused region disposed at least in parts of semiconductor layers from a surface semiconductor layer of a semiconductor layer assembly to a second semiconductor layer lying in contact with a first semiconductor having an active region. The impurity-diffused region has the same conductivity type as that of the second semiconductor layer and extends at least from the surface semiconductor layer to a depth vicinal to the first semiconductor layer, the impurity region serving as a current path. The device is characterized in that a third semiconductor layer in which the diffusion rate of an impurity for use in the formation of the impurity-diffused region is lower than in the second semiconductor layer is disposed between the surface semiconductor layer and the second semiconductor layer.

379922

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