Semiconductor laser device

H - Electricity – 01 – S

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H01S 5/12 (2006.01) H01S 5/026 (2006.01) H01S 5/0625 (2006.01) H01S 5/028 (2006.01) H01S 5/227 (2006.01) H01S 5/323 (2006.01)

Patent

CA 1253946

ABSTRACT A semiconductor laser device has a laser region including a semi- conductor substrate, an active layer formed over the semiconductor substrate for emitting radiation when excited and a diffraction grating provided over or under the active layer for coupling the radiation. The device also is formed with a tuning region including an optical waveguide layer optically coupled to the laser region for waveguiding and constituting a part of the laser oscil- lation light path. An electrode is provided for injecting an electric current into the optical waveguide layer. A vertical end facet of the optical wave- guide layer is provided with a high reflectivity structure for a reflectivity of 50% or above. The invention permits continuous wavelength tuning.

487530

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