Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

H - Electricity

01

S

345/32

H01S 5/16 (2006.01) H01S 5/22 (2006.01) H01S 5/40 (2006.01)

Patent

CA 1184285

Abstract: A semiconductor laser device has at least a laminated region of first, second, third and fourth semiconductor layers on a predetermined semiconductor substrate. The third layer has a refractive index smaller than that of the second layer. The first and fourth layers have a refractive index smaller than that of the second and third layers and a conductivity type opposite that of the second and third layers. The forbidden band gap of the first and third layers is greater than that of the second semiconductor layer. At least the second and third layers are bent so that the laser light generated inside the second layer in the proximity of the light-emitting facets generates optical coupling in the third layer and is emitted from the crystal facets of the third layer. This device is effective for increasing output and reducing catastrophic degradation of the facets.

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