Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

H - Electricity

01

S

345/32

H01S 3/18 (1985.01)

Patent

CA 1201191

SEMICONDUCTOR LASER DEVICE Abstract of the Disclosure A semiconductor laser device comprises a semiconductor body of a first conductivity type having a major surface and a plurality of contiguous semiconductor layers disposed on this major surface. These contiguous semiconductor layers are comprised of: i) a first semiconductor layer having a laser active region and having two opposite plane surfaces, ii) a second semiconductor layer disposed on the first of the two opposite plane surfaces, consisting of a material having a band gap broader than that of the first semiconductor layer, and consisting of a thin region having a thickness t1 not greater than 3r, where r is the distance in which the evanescent wave decays by 1/e, and a thick region having a thickness t2 larger than 3r, and iii) a third semiconductor layer disposed on the second surface of the two opposite plane surfaces and con- sisting of a material having a band gap broader than that of the first semiconductor layer. The device operates stably in the lowest transverse mode and provides light-output versus current characteristics free of kinks or other anomalies.

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