Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

H - Electricity

01

S

345/32, 356/32

H01S 5/10 (2006.01)

Patent

CA 1167572

- 1 - Abstract: A semiconductor laser device has at least a first semiconductor layer, second and third semiconductor layers formed to sandwich the first semiconductor layer and having a wider band gap and a lower refractive index than those of the first semiconductor layer, an optical resonator and carrier injection means. The device is characterized in that at least the first semiconductor layer has an angle of inclination (.theta.) relative to an axis perpendicular to optically flat faces constituting the optical resonator. The inclination angle .theta. (rad) should preferably lie in the range of: Image where .theta.z denotes a reflection angle, .theta.c a critical angle, W is 1/2 the thickness of the waveguide, and ? is the cavity length. The device is effective for preventing the laser facets from breaking down, and as a result can produce more power than prior lasers.

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