H - Electricity – 01 – L
Patent
H - Electricity
01
L
345/46
H01L 27/15 (2006.01) H01S 5/026 (2006.01) H01S 5/0625 (2006.01) H01S 5/062 (2006.01) H01L 33/00 (2006.01)
Patent
CA 1152197
- 1 - Abstract: Disclosed is a semiconductor laser device comprising a layered semiconductor region capable of laser oscillation and including at least an optical confinement region con- sisting of stacked semiconductor layers, a unit for inject- ing current into the optical confinement region, and an optical resonator. A switch is provided for supplying the layered semiconductor region with a current having a value near a threshold current value for laser oscillation. A switch is provided for feeding a current to be superimposed on the current supplied to the layered semiconductor region. This switch is capable of controlling the current to be superimposed through an external input. The semiconductor laser device is compact, and permits modulation up to a high frequency.
364710
Fukuzawa Tadashi
Nakamura Michiharu
Takahashi Susumu
Hitachi Ltd.
Kirby Eades Gale Baker
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