Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

H - Electricity

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H01S 5/22 (2006.01) H01S 5/12 (2006.01) H01S 5/227 (2006.01) H01S 5/30 (2006.01) H01S 5/028 (2006.01) H01S 5/10 (2006.01) H01S 5/34 (2006.01)

Patent

CA 2355429

The semiconductor laser device the n-InP cladding layer, SCH-MQW active layer, p-InP cladding layer, and p-GaInAsP optical waveguide layer are respectively formed into a tapered shape on the n-InP substrate . The combination of oscillation parameters of the tapered shape, the grating pitch of a diffraction grating, an optical waveguide including an active layer, and the length of a resonator are adjusted so that laser beam including two or more oscillating longitudinal modes are output.

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