H - Electricity – 01 – S
Patent
H - Electricity
01
S
H01S 5/16 (2006.01) H01S 5/042 (2006.01) H01S 5/223 (2006.01) H01S 5/32 (2006.01) H01S 5/323 (2006.01) H01S 3/025 (1990.01)
Patent
CA 2106596
There is provided a semiconductor laser device that can be driven for a high-output power level without degradation in the quality of the device. It comprises a double heterostructure including an active layer (5, 25) and an electrode layer (9, 29) arranged on a semiconductor substrate (l, 21) having a current injection region extending through the electrode layer (9, 29) and the active layer (5, 25), a structural scheme being provided either in a region located above the active layer (5, 25) or in a region covering an resonator of the active layer (5, 25) in order to reduce the injection current level of the device. With such an arrangement, the energy output level of the semiconductor laser device is remarkably enhanced and its reliability is greatly improved, because it can be driven for a high-output power level without degradation in the quality of the device.
Kikuta Toshio
Ohkubo Michio
Ridout & Maybee Llp
The Furukawa Electric Co. Ltd.
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