Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

H - Electricity

01

S

H01S 5/30 (2006.01) H01S 5/223 (2006.01) H01S 5/323 (2006.01) H01S 5/22 (2006.01)

Patent

CA 2327893

A self-aligned type semiconductor laser device which is capable of oscillation at high optical output, scarcely develops COMD, and maintains high reliability for a long term. The SAS type semiconductor laser device has an active layer, and a low refractive-index layer formed close the active layer and functioning also as a current blocking layer. The low refractive-index layer includes a plurality of compound semiconductor layers made of Al x Ga 1-x as (0 ~ x ~ 1), and the compound semiconductor layers have refractive indices thereof set such that the refractive index lowers with increasing distance from the active layer. Specifically, the low refractive-index layer includes a plurality of AlGaAs layers, and the AlGaAs layers have contents of Al thereof set such that the content of Al increases with increasing distance from the active layer.

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