Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

H - Electricity

01

S

H01S 5/34 (2006.01) H01S 5/227 (2006.01) H01S 5/20 (2006.01) H01S 5/32 (2006.01)

Patent

CA 2350311

A semiconductor laser device having high optical output power is provided. The semiconductor laser device has an n-type lower cladding layer, a lower optical confinement layer, an active layer having a quantum well structure, an upper optical confinement layer, a Zn-doped p-type upper cladding layer, and a cap layer formed on an n-type semiconductor substrate in this order. A nondoped semiconductor layer having a thickness of 10 to 100 nm, in particular, a nondoped InP layer, is interposed between the upper optical confinement layer and the Zn-doped p- type upper cladding layer.

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