H - Electricity – 01 – S
Patent
H - Electricity
01
S
H01S 5/022 (2006.01) H01S 3/025 (1995.01)
Patent
CA 2112343
A semiconductor laser device includes a base, a semiconductor laser chip and a resin layer enclosing the semiconductor laser chip. The base may have a monitor photodiode chip mounted thereon in the vicinity of the semiconductor laser chip. The resin layer enclosing the semiconductor laser chipor both of the semiconductor laser chip and the monitor photodiode chip is made of a single synthetic resin having a thickness not greater than 500µm and also having a surface substantially parallel to an outwardly oriented beam emitting end face of the semiconductor laser chip.
L'invention est un laser à semi-conducteur comportant une base et une puce laser enrobée d'une couche de résine. Une puce à photodiode de contrôle peut être montée sur la base au voisinage de la puce laser. La couche de résine enrobant la puce laser ou la puce laser et la puce à photodiode est faite d'une seule résine synthétique; elle a une épaisseur qui ne dépasse pas 500 m et sa surface est essentiellement parallèle à la face émettrice de la puce laser d'où émerge le faisceau.
Chikugawa Hiroshi
Masui Katsushige
Miyauchi Nobuyuki
Ogawa Masaru
Shiomoto Takehiro
G. Ronald Bell & Associates
Sharp Kabushiki Kaisha
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