Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

H - Electricity

01

S

H01S 5/20 (2006.01) H01S 5/32 (2006.01) H01S 5/343 (2006.01)

Patent

CA 2254484

Optical guide layers are formed on both faces of the active layer, respectively, which optical guide layers have a band gap wider than that of the active layer, an n-type cladding layer and a p-type cladding layer respectively formed so as to sandwich the active layer and the optical guide layers therebetween, which cladding layers have a band gap wider than those of the optical guide layers, and carrier blocking layers are respectively formed between the active layer and the optical guide layers, which carrier blocking layers have a band gap wider than those of the active layer and the optical guide layers. The refractive index of the p-type cladding layer is lower than that of the n-type cladding layer. With such constitution inner losses are limited to a low level, as free carrier absorption is reduced, and the electric and thermal resistances of a semiconductor laser device are reduced, with the result that the laser device is enhanced in efficiency and output power.

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