H - Electricity – 01 – S
Patent
H - Electricity
01
S
345/32
H01S 5/34 (2006.01) H01S 5/062 (2006.01) H01S 5/30 (2006.01) H01S 5/343 (2006.01)
Patent
CA 2018841
- 1 - Abstract of the Disclosure The present invention relates to a semiconductor laser device of the field modulation type having a structure in which the threshold carrier density for laser oscillation is reduced so as to enable an effective action of a modulated electric field applied externally on an active region for radiating light, thereby enabling an extremely high speed modulation. A quantum structure which does not fulfill the charge neutrality condition for free-carriers or a strained super lattice structure is adpoted as the structure in which the threshold carrier density is reduced.
Chinone Naoki
Ohtoshi Tsukuru
Sasaki Shinji
Tsuchiya Tomonobu
Uomi Kazuhisa
Hitachi Ltd.
Kirby Eades Gale Baker
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