Semiconductor laser device

H - Electricity – 01 – S

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H01S 5/34 (2006.01) H01S 5/062 (2006.01) H01S 5/30 (2006.01) H01S 5/343 (2006.01)

Patent

CA 2018841

- 1 - Abstract of the Disclosure The present invention relates to a semiconductor laser device of the field modulation type having a structure in which the threshold carrier density for laser oscillation is reduced so as to enable an effective action of a modulated electric field applied externally on an active region for radiating light, thereby enabling an extremely high speed modulation. A quantum structure which does not fulfill the charge neutrality condition for free-carriers or a strained super lattice structure is adpoted as the structure in which the threshold carrier density is reduced.

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