Semiconductor laser device

H - Electricity – 01 – S

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H01S 5/10 (2006.01) H01S 5/0625 (2006.01) H01S 5/062 (2006.01) H01S 5/12 (2006.01) H01S 5/227 (2006.01) H01S 5/34 (2006.01) H01S 5/343 (2006.01)

Patent

CA 2018928

ABSTRACT OF THE DISCLOSURE A wavelength-tunable semiconductor laser device presenting a large wavelength-tunable range or a very-high-speed modulating semiconductor laser device having a distributed feedback structure including a diffraction grating as in the case of a DBR laser or a DFB laser incorporates therein a plurality of active layers differing from one another in constituent elements or composition ratio or thickness for reducing spectral line widths, while improving single-mode spectral oscillation characteristics.

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