Semiconductor laser device

H - Electricity – 01 – S

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H01S 5/40 (2006.01) H01S 5/10 (2006.01) H01S 5/042 (2006.01)

Patent

CA 1152623

- 1 - Abstract: Disclosed is a semiconductor laser device having on a predetermined semiconductor substrate a stacked region for optical confinement including an active layer and clad layers, a first electrode disposed on the semiconductor substrate side and a second electrode disposed over the stacked region, and an optical resonator. The semi- conductor laser device is comprised in that the unit for injecting current into the active layer is formed of a plurality of stripe conductive regions which are juxtaposed in a traveling direction of a laser beam, and that laser radiation emitted in correspondence with the respective stripe conductive regions add together and give rise to nonlinear interactions. As a typical example of the current injection means, the conductive regions have a stripe-shaped pattern which includes a broader portion and a narrower portion. A coupled-multiple-stripe laser device in which the phase and wavelength of the laser radiation of the respective stripes are uniform is realized.

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