Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

H - Electricity

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S

345/32

H01S 5/223 (2006.01) H01S 5/12 (2006.01)

Patent

CA 1105598

SEMICONDUCTOR LASER DEVICE Abstract of the Disclosure A novel semiconductor laser device is provided in which each of the longitudinal and transverse modes is stabilized and in which no excessive optical noise for a modulated signal is generated by mode competition. The fundamental construction of the device comprises a first semi- conductor layer sandwiched between second and third semiconductor layers which are greater in band gap and lower in refractive index than the first semiconductor layer. That region of at least one of the second and third semiconductor layers that is remote from the first semiconductor layer is a semiconductor layer that corresponds substantially to a radiation region and serves as a light non-absorptive region in the shape of a stripe. A semiconductor layer has portions lying on both sides of the semiconductor layer remote from the first semicon- ductor layer and makes an effective complex refractive index for laser light discontinous at both ends of the semiconductor layer remote from the first semiconductor layer. Periodic corrugations which intersect orthogonally the lengthwise direction of the stripe-shaped, light non-absorptive region are formed in at least one lnterface of the semiconductor layers in a manner to include at least a region corresponding to the light non-absorptive region.

307988

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