Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

H - Electricity

01

S

345/32

H01S 5/20 (2006.01) H01S 5/32 (2006.01) H01S 5/227 (2006.01)

Patent

CA 1147045

ABSTRACT OF THE DISCLOSURE A semiconductor laser device is capable of producing an increased optical output power with improved optical characteristics without being subjected to mode distortions in the output beam, while retaining advantageous features inherent to a semiconductor laser device of a buried heterostructure. The semiconductor laser device comprises an optical confinement region which is constituted by at least first, second, third and fourth semiconductor layers successively laminated on a pre- determined semiconductor substrate. The second semi- conductor layer has a relatively small refractive index and a relatively wide band gap as compared with those of the third semiconductor layer, while the first and the fourth semiconductor layers which are of the conductivity types opposite to each other have relatively small refractive indexes as compared with the second and the third semiconductor layers. The band gaps of the fourth and the second semiconductor layers are relatively large as compared with that of the third semiconductor layer. Difference in the band gap at least between the second and the third semiconductor layers is not smaller than 0.15 eV.

335825

Affiliated with

Also associated with

Rating

Semiconductor laser device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-741054