Semiconductor laser device and method for fabricating the same

Details Semiconductor laser device and method for fabricating the same Semiconductor laser device and method for fabricating the same

H - Electricity

01

S

H01S 5/227 (2006.01) H01L 33/00 (2006.01) H01S 5/22 (2006.01)

Patent

CA 2363908

A method for fabricating a buried semiconductor laser device including the steps of: forming a mesa structure including a bottom cladding layer, an active layer and a top. cladding layer overlying an n-type semiconductor substrate; and forming a current confinement structure by growing a p-type current blocking layer and an n-type current blocking layer on each side surface of the mesa structure and on a skirt portion extending from the each side surface, the p-type current blocking layer being fabricated by using a raw material gas containing a group III element gas and a group V element gas at a molar ratio between 60 and 350 inclusive. In this method, the semiconductor laser device including the current confinement structure with the specified leakage current path width can be fabricated with the excellent reproducibility.

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