H - Electricity – 01 – S
Patent
H - Electricity
01
S
H01S 5/10 (2006.01) H01S 5/125 (2006.01) H01S 5/16 (2006.01) H01S 5/50 (2006.01) H04J 14/02 (2006.01) H01S 3/0941 (2006.01)
Patent
CA 2369704
A semiconductor device and method for providing a light source suitable for use as a pumping light source in a Raman amplification system are provided. The device upon which the method is based includes an active layer configured to radiate light, a light reflecting facet positioned on a first side of the active layer, and a light emitting facet positioned on a second side of the active layer thereby forming a resonator between the light reflecting facet and the light emitting facet. A diffraction grating is positioned within the resonator along a portion of the length of the active layer, and a non-current injection area is formed along the diffraction grating so as to suppress injection current in the portion of the length of the active layer. The non-current injection area preferably has a length Li greater than a length Lg of the diffraction grating by an amount necessary to prevent scatter injection current from affecting the diffraction grating.
Tsukiji Naoki
Yoshida Junji
Fetherstonhaugh & Co.
The Furukawa Electric Co. Ltd.
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