H - Electricity – 01 – S
Patent
H - Electricity
01
S
H01S 5/02 (2006.01) H01S 3/025 (1990.01) H01S 3/085 (1990.01)
Patent
CA 2088754
ABSTRACT OF THE DISCLOSURE A semiconductor laser device includes a laser chip and a submount. The laser chip includes a mesa-shaped semiconductor substrate having a surface on which a plurality of layers required for generating laser oscillations are epitaxially grown to be conformal to the surface contour of the substrate. The laser chip is soldered upside down to the submount. If solder rises up along the side surfaces of the laser chip, it does not short-circuit a PN junction contained in the epitaxially grown layers.
Mitsubishi Denki Kabushiki Kaisha
Smart & Biggar
LandOfFree
Semiconductor laser device and method of making same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor laser device and method of making same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser device and method of making same will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1958680