Semiconductor laser device and method of manufacturing the same

Details Semiconductor laser device and method of manufacturing the same Semiconductor laser device and method of manufacturing the same

H - Electricity

01

S

345/33

H01S 5/223 (2006.01) H01S 5/12 (2006.01) H01L 33/00 (2006.01)

Patent

CA 1125898

Semiconductor Laser Device and Method of Manufacturing the Same Abstract of the Disclosure The specification discloses a semiconductor laser device comprising a semiconductor material assembly including a substrate for crystal growth having on the surface thereof a second semiconductor layer, a first semiconductor layer having an active region formed above the substrate for crystal growth and a third semicon- ductor layer, the refractive index of each of the second semiconductor material region and the third semiconductor layer being smaller than that of the first semiconductor layer and the band gap of each of the second semiconductor material region and the third semiconductor layer being broader than that of the first semiconductor layer. A first electrode is formed on one surface of the semi- conductor material assembly on the side of the third semiconductor layer, a second electrode is formed on one surface of the semiconductor assembly on the side of the substrate for crystal growth, and at least one device for performing optical feedback to generate optical radiations is provided. The thickness of the active region in the contact interface between the first semiconductor layer and the substrate for crystal growth is made larger than the thickness of the other portion in the first semicon- ductor layer so that the effective refractive index to laser beams is changed stepwise in a direction vertical to the advance direction of laser beams. The resulting device is effective for prolonging the oscillation wave- length and stabilizing the transverse mode.

330850

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