H - Electricity – 01 – S
Patent
H - Electricity
01
S
345/32
H01S 5/227 (2006.01)
Patent
CA 1151275
Abstract: A buried-heterostructure semiconductor laser including a mesa-shaped optical confinement region having an active layer and a clad layer and disposed on a semiconductor substrate; a burying layer burying both side surfaces of the region; and at least one p-n junction so formed inside the burying layer in parallel to the active layer so as to be in a reverse biased state during the operation of the laser. Surface protection semiconductor layers are formed on the mesa-shaped optical confinement region and on the burying layer, respectively. They protect the semiconducor assembly in the arrangement such that the surface of the protection semiconductive layers do not come into direct contact with each other. Even if the forbidden band gaps of these surface protection semiconductor layers are relatively small, it is possible to realize a semiconductor laser having an extremely small leakage current and reduced variance of threshold current values, while protecting the surface of the multi-layer semiconductor layers.
377009
Doi Atsutoshi
Hirao Motohisa
Mori Takao
Nakamura Michiharu
Tsuji Shinji
Hitachi Ltd.
Kirby Eades Gale Baker
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