Semiconductor laser device having a high characteristic...

Details Semiconductor laser device having a high characteristic... Semiconductor laser device having a high characteristic...

H - Electricity

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H01S 5/30 (2006.01) H01S 5/34 (2006.01) H01S 5/343 (2006.01) H01S 5/183 (2006.01) H01S 5/20 (2006.01) H01S 5/32 (2006.01) H01S 5/323 (2006.01)

Patent

CA 2382860

A semiconductor laser device includes a resonant cavity formed on a GaAs substrate, the resonant cavity including a quantum well (QW) active layer structure having a GaInNAs(Sb) well layer and a pair of barrier layers. The QW structure has a conduction band offset energy (.DELTA.Ec) equal to or higher than 350 mini- electron-volts (meV) between the well layer and the barrier layers, and each of the barrier layers a tensile strain equal to or lower than 2.5%.

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