Semiconductor laser device having lower threshold current

Details Semiconductor laser device having lower threshold current Semiconductor laser device having lower threshold current

H - Electricity

01

S

H01S 5/34 (2006.01) H01S 5/183 (2006.01) H01S 5/343 (2006.01) H01S 5/323 (2006.01)

Patent

CA 2354420

A semiconductor laser device includes a QW active layer structure including a Ga x In1-x As1-y Sb y layer wherein 0.3 ~ 1-x and 0.003 ~ y ~ 0.008, or a QW active layer structure including a Ga x In1-x A s1-y1-y2N y1Sb y2 layer wherein 0.3 ~ 1-x, 0< y1 <0.03 and 0.002 ~ y2 ~ 0.06. The semiconductor laser device suppresses the three-dimensional epitaxial growth, and has superior optical characteristics including a low threshold current.

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