H - Electricity – 01 – S
Patent
H - Electricity
01
S
345/32
H01S 5/343 (2006.01) H01S 5/028 (2006.01) H01S 5/14 (2006.01) H01S 5/34 (2006.01)
Patent
CA 2038835
ABSTRACT OF THE DISCLOSURE In a semiconductor laser diode having a single- or multi-quantum well structure active layer, and a GRIN-SCH structure light confinement layer, a pair of cleaved facets for forming a resonator are covered with insulator films so as to make one facet low reflectivity and the other high reflectivity. Thus, a high output power in single axial mode can be produced from the low-reflectivity facet of the semiconductor laser diode.
Irikawa Michinori
Kasukawa Akihiko
Matsumoto Narihito
Okamoto Hiroshi
Irikawa Michinori
Kasukawa Akihiko
Matsumoto Narihito
Okamoto Hiroshi
Ridout & Maybee Llp
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