Semiconductor laser element and laser device using the same...

H - Electricity – 01 – S

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H01S 5/20 (2006.01) H01S 5/34 (2006.01) H01S 5/32 (2006.01) H01S 5/323 (2006.01) H01S 5/343 (2006.01) H01S 3/18 (1995.01)

Patent

CA 2106562

A semiconductor laser of this invention, having a structure of an element composed of: carrier block layers, formed bilaterally externally of an active layer in section which is formed in the vertical direction from the surface of the element, for reducing a light guiding function of the active layer; wave guide layers provided bilaterally externally of said carrier block layers and clad layers provided so that the wave guide layers are sandwiched in between the clad layers. This invention overcomes a dilemma inherent in the conventional weakly guiding laser and LOC structured laser in terms of designing the device for controlling a guided mode. The present invention also solves the problems in terms of attaining higher outputting and a low dispersion of the radiation beams and improving a beam profile.

L'invention se rapporte à un laser à semi-conducteur qui comprend: des couches d'arrêt disposées sur les deux sections transversales d'une couche active formée dans le sens vertical à la surface du dispositif, afin d'affaiblir la fonction de guide d'ondes de lumière de la couche active; des couches guides d'ondes ayant des bandes interdites et situées des deux côtés des couches d'arrêt; ainsi que des couches de revêtement prenant en sandwich les couches guides d'ondes. Grâce à cette structure, le dilemme en ce qui concerne la conception d'un dispositif de commande du mode guide d'ondes, rencontré avec les lasers traditionnels du type faiblement guidé et à structure LOC, est supprimé. En outre, les difficultés habituellement rencontrées pour obtenir une plus grande puissance de sortie, une divergence réduite du faisceau émis et une amélioration du profil du faisceau sont éliminées.

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